NUMERICAL-SIMULATION OF HEAT-TRANSFER IN LEC GROWTH OF GALLIUM-ARSENIDE

被引：0
|
作者：
NICODEME, P
DUPRET, F
CROCHET, MJ
FARGES, JP
NAGEL, G
机构：
来源：
SEMI-INSULATING III-V MATERIALS, MALMO 1988 | 1988年
关键词：
D O I：
暂无
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：471 / 476
页数：6
相关论文
共 50 条
  • [21] A NOVEL TECHNIQUE TO REDUCE THE CONCENTRATION OF CARBON IN LEC GALLIUM-ARSENIDE
    MARSHALL, HD
    DECUIR, DW
    JOURNAL OF CRYSTAL GROWTH, 1991, 110 (04) : 960 - 962
  • [22] NUMERICAL-SIMULATION OF INFRARED RADIATION HEAT-TRANSFER IN A FURNACE-TUNNEL
    HARMAND, S
    BAUDOIN, B
    REVUE GENERALE DE THERMIQUE, 1991, 30 (360): : 740 - 746
  • [23] DIRECT NUMERICAL-SIMULATION OF PASSIVE HEAT-TRANSFER IN A TURBULENT CHANNEL FLOW
    LYONS, SL
    HANRATTY, TJ
    MCLAUGHLIN, JB
    INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER, 1991, 34 (4-5) : 1149 - 1161
  • [24] HEAT-CAPACITY OF GALLIUM-ARSENIDE
    DASH, AJ
    FINCH, A
    GARDNER, PJ
    COTTRELL, M
    JOURNAL OF CHEMICAL AND ENGINEERING DATA, 1974, 19 (02): : 113 - 114
  • [25] CALCULATION OF THE SHEAR-STRESS DISTRIBUTION IN LEC GALLIUM-ARSENIDE FOR DIFFERENT GROWTH-CONDITIONS
    SCHVEZOV, CE
    SAMARASEKERA, IV
    WEINBERG, F
    JOURNAL OF CRYSTAL GROWTH, 1988, 92 (3-4) : 479 - 488
  • [26] LEC-GROWTH AND THE MAJOR ELECTRICAL AND STRUCTURAL CHARACTERISTICS OF SEMI-INSULATING GALLIUM-ARSENIDE
    FORNARI, R
    PAORICI, C
    ZANOTTI, L
    ZUCCALLI, G
    ACTA PHYSICA HUNGARICA, 1985, 57 (3-4) : 263 - 270
  • [27] EPITAXIAL-GROWTH OF GALLIUM-ARSENIDE
    BOUCHER, A
    EASTON, BC
    PHILIPS TECHNICAL REVIEW, 1971, 32 (9-12): : 380 - 384
  • [28] DEEP LEVEL CHARACTERIZATION IN SEMI-INSULATING LEC GALLIUM-ARSENIDE
    FORNARI, R
    DOZSA, L
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 105 (02): : 521 - 530
  • [29] PATTERNED GROWTH OF GALLIUM-ARSENIDE ON SILICON
    MATYI, RJ
    SHICHIJO, H
    TSAI, HL
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02): : 699 - 702
  • [30] NUCLEATION AND GROWTH OF GALLIUM-ARSENIDE ON SILICON
    BARTENLIAN, B
    BISARO, R
    OLIVIER, J
    HIRTZ, JP
    PITAVAL, M
    MEDDEB, J
    ROCHER, A
    APPLIED SURFACE SCIENCE, 1992, 56-8 : 589 - 596
12345