PROCESSING OF ALL-NBN TUNNEL JUNCTION SERIES ARRAYS

被引：9
作者：
BLAUGHER, RD
PRZYBYSZ, JX
TALVACCHIO, J
BUTTYAN, J
机构：
来源：
IEEE TRANSACTIONS ON MAGNETICS | 1987年 / 23卷 / 02期
关键词：
D O I：
10.1109/TMAG.1987.1064979
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：673 / 675
页数：3
相关论文
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[1]   HIGH-QUALITY REFRACTORY JOSEPHSON TUNNEL-JUNCTIONS UTILIZING THIN ALUMINUM LAYERS [J].
GURVITCH, M ;
WASHINGTON, MA ;
HUGGINS, HA .
APPLIED PHYSICS LETTERS, 1983, 42 (05) :472-474
[2]   AN INTEGRATION OF ALL REFRACTORY JOSEPHSON LOGIC LSI CIRCUIT [J].
KOSAKA, S ;
SHOJI, A ;
AOYAGI, M ;
SHINOKI, F ;
TAHARA, S ;
OHIGASHI, H ;
NAKAGAWA, H ;
TAKADA, S ;
HAYAKAWA, H .
IEEE TRANSACTIONS ON MAGNETICS, 1985, 21 (02) :102-109
[3]   SELECTIVE NIOBIUM ANODIZATION PROCESS FOR FABRICATING JOSEPHSON TUNNEL-JUNCTIONS [J].
KROGER, H ;
SMITH, LN ;
JILLIE, DW .
APPLIED PHYSICS LETTERS, 1981, 39 (03) :280-282
[4]   ALL REFRACTORY JOSEPHSON TUNNEL-JUNCTIONS FABRICATED BY REACTIVE ION ETCHING [J].
SHOJI, A ;
KOSAKA, S ;
SHINOKI, F ;
AOYAGI, M ;
HAYAKAWA, H .
IEEE TRANSACTIONS ON MAGNETICS, 1983, 19 (03) :827-830
[5]   NIOBIUM NITRIDE JOSEPHSON TUNNEL-JUNCTIONS WITH MAGNESIUM-OXIDE BARRIERS [J].
SHOJI, A ;
AOYAGI, M ;
KOSAKA, S ;
SHINOKI, F ;
HAYAKAWA, H .
APPLIED PHYSICS LETTERS, 1985, 46 (11) :1098-1100
[6]   ARTIFICIAL OXIDE BARRIERS FOR NBN TUNNEL-JUNCTIONS [J].
TALVACCHIO, J ;
GAVALER, JR ;
BRAGINSKI, AI ;
JANOCKO, MA .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (12) :4638-4642
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