POINT-DEFECT GENERATION DURING PHOSPHORUS DIFFUSION IN SILICON .1. CONCENTRATIONS ABOVE SOLID SOLUBILITY

被引：19

作者：

TSAI, JCC

SCHIMMEL, DG

FAIR, RB

MASZARA, W

机构：

[1] MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709

[2] N CAROLINA STATE UNIV,DEPT MAT ENGN,RALEIGH,NC 27650

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 06期

关键词：

D O I：

10.1149/1.2100701

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1508 / 1518

页数：11

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