POINT-DEFECT GENERATION DURING PHOSPHORUS DIFFUSION IN SILICON .1. CONCENTRATIONS ABOVE SOLID SOLUBILITY

被引：19
|
作者：
TSAI, JCC
SCHIMMEL, DG
FAIR, RB
MASZARA, W
机构：
[1] MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709
[2] N CAROLINA STATE UNIV,DEPT MAT ENGN,RALEIGH,NC 27650
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 06期
关键词：
D O I：
10.1149/1.2100701
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：1508 / 1518
页数：11
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