PHOTOLUMINESCENCE STUDY OF THE SHALLOW DONOR NEUTRALIZATION IN GAAS(SI) BY ATOMIC-HYDROGEN

被引：48

作者：

WEBER, J ^{[1
]}

PEARTON, SJ ^{[1
]}

DAUTREMONTSMITH, WC ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 18期

关键词：

D O I：

10.1063/1.97408

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1181 / 1183

页数：3

共 12 条

[1] HYDROGEN PASSIVATION OF POINT-DEFECTS IN SILICON
BENTON, JL
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FLAMM, DL
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LEAMY, HJ
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (08) : 670 - 671
[2] DONOR NEUTRALIZATION IN GAAS(SI) BY ATOMIC-HYDROGEN
CHEVALLIER, J
DAUTREMONTSMITH, WC
TU, CW
PEARTON, SJ
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (02) : 108 - 110
[3] LUMINESCENCE AND EXCITATION-SPECTRA OF EXCITON EMISSION IN GAAS
HEIM, U
HIESINGE.P
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1974, 66 (02): : 461 - 470
[4] HILL DE, 1964, PHYS REV A, V133, P866
[5] INTERSTITIAL HYDROGEN AND NEUTRALIZATION OF SHALLOW-DONOR IMPURITIES IN SINGLE-CRYSTAL SILICON
JOHNSON, NM
HERRING, C
CHADI, DJ
[J]. PHYSICAL REVIEW LETTERS, 1986, 56 (07) : 769 - 772
[6] HYDROGEN PASSIVATION OF SHALLOW-ACCEPTOR IMPURITIES IN PARA-TYPE GAAS
JOHNSON, NM
BURNHAM, RD
STREET, RA
THORNTON, RL
[J]. PHYSICAL REVIEW B, 1986, 33 (02): : 1102 - 1105
[7] NEUTRALIZATION OF SHALLOW ACCEPTOR LEVELS IN SILICON BY ATOMIC-HYDROGEN
PANKOVE, JI
CARLSON, DE
BERKEYHEISER, JE
WANCE, RO
[J]. PHYSICAL REVIEW LETTERS, 1983, 51 (24) : 2224 - 2225
[8] HYDROGEN LOCALIZATION NEAR BORON IN SILICON
PANKOVE, JI
ZANZUCCHI, PJ
MAGEE, CW
LUCOVSKY, G
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (04) : 421 - 423
[9] HYDROGENATION OF SHALLOW-DONOR LEVELS IN GAAS
PEARTON, SJ
DAUTREMONTSMITH, WC
CHEVALLIER, J
TU, CW
CUMMINGS, KD
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (08) : 2821 - 2827
[10] STUDY OF THE ATOMIC MODELS OF 3 DONORLIKE DEFECTS IN SILICON METAL-OXIDE-SEMICONDUCTOR STRUCTURES FROM THEIR GATE MATERIAL AND PROCESS DEPENDENCIES
SAH, CT
SUN, JYC
TZOU, JJT
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (06) : 1525 - 1545

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