FIELD-EFFECT TRANSISTOR WITH FORWARD BIASED GATE-CHANNEL JUNCTION

被引：1
作者：
COBBOLD, RSC
TROFIMENKO, FN
机构：
来源：
PROCEEDINGS OF THE IEEE | 1964年 / 52卷 / 09期
关键词：
D O I：
10.1109/PROC.1964.3272
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：1073 / &
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