FIELD-EFFECT TRANSISTOR WITH FORWARD BIASED GATE-CHANNEL JUNCTION

被引：1

|

作者：

COBBOLD, RSC

TROFIMENKO, FN

机构：

来源：

PROCEEDINGS OF THE IEEE | 1964年 / 52卷 / 09期

关键词：

D O I：

10.1109/PROC.1964.3272

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：1073 / &

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