FIELD-EFFECT TRANSISTOR WITH FORWARD BIASED GATE-CHANNEL JUNCTION

被引：1
作者：
COBBOLD, RSC
TROFIMENKO, FN
机构：
来源：
PROCEEDINGS OF THE IEEE | 1964年 / 52卷 / 09期
关键词：
D O I：
10.1109/PROC.1964.3272
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1073 / &
相关论文
共 50 条
[21]   Ultrawide Bandgap Channel Polarization-Doped Junction Field-Effect Transistor [J].
Ramesh, Madhav ;
Agrawal, Shivali ;
Xing, Huili Grace ;
Jena, Debdeep .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2025,
[22]   A strained organic field-effect transistor with a gate-tunable superconducting channel [J].
Yamamoto, Hiroshi M. ;
Nakano, Masaki ;
Suda, Masayuki ;
Iwasa, Yoshihiro ;
Kawasaki, Masashi ;
Kato, Reizo .
NATURE COMMUNICATIONS, 2013, 4
[23]   An improved tunnel field-effect transistor with an L-shaped gate and channel [J].
Nithin Abraham ;
Rekha K. James .
Journal of Computational Electronics, 2020, 19 :304-309
[24]   Field-effect transistor with 2D carrier systems in the gate and channel [J].
V. G. Popov .
Semiconductors, 2016, 50 :235-239
[25]   An improved tunnel field-effect transistor with an L-shaped gate and channel [J].
Abraham, Nithin ;
James, Rekha K. .
JOURNAL OF COMPUTATIONAL ELECTRONICS, 2020, 19 (01) :304-309
[26]   IMPEDANCE AND NOISE IN CHANNEL OF A GAAS SCHOTTKY-GATE FIELD-EFFECT TRANSISTOR [J].
SODINI, D ;
LECOY, G ;
RIGAUD, D ;
ROLLAND, M .
SOLID-STATE ELECTRONICS, 1977, 20 (07) :579-581
[27]   ANOMALOUS NOISE BEHAVIOR OF JUNCTION-GATE FIELD-EFFECT TRANSISTOR AT LOW TEMPERATURES [J].
KLAASSEN, FM ;
ROBINSON, JR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (10) :852-+
[28]   VERY HIGH TRANSCONDUCTANCE INGAAS/INP JUNCTION FIELD-EFFECT TRANSISTOR WITH SUBMICROMETER GATE [J].
RAULIN, JY ;
THORNGREN, E ;
DIFORTEPOISSON, MA ;
RAZEGHI, M ;
COLOMER, G .
APPLIED PHYSICS LETTERS, 1987, 50 (09) :535-536
[29]   SiC Complementary Junction Field-Effect Transistor Logic Gate Operation at 623 K [J].
Kaneko, M. ;
Nakajima, M. ;
Jin, Q. ;
Kimoto, T. .
IEEE ELECTRON DEVICE LETTERS, 2022, 43 (07) :997-1000
[30]   THE HETERO MATERIAL GATE AND HETERO-JUNCTION TUNNEL FIELD-EFFECT TRANSISTOR WITH POCKET [J].
Jiang, Zhi ;
Zhuang, Yiqi ;
Li, Cong ;
Ping, Wang .
2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2014,
12345