PULSED-LASER DEPOSITION (PLD) OF III-V SEMICONDUCTORS - EPITAXIAL FILM GROWTH AND GAS-PHASE SPECIES ANALYSIS BY IN-SITU TIME-OF-FLIGHT MASS-SPECTROMETRY

被引：0

|

作者：

LACKOWSKI, WM ^{[1
]}

VANDUYNE, RP ^{[1
]}

机构：

[1] NORTHWESTERN UNIV,DEPT CHEM,EVANSTON,IL 60208

来源：

ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY | 1995年 / 210卷

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中图分类号：

O6 [化学];

学科分类号：

0703 ;

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页码：255 / PHYS

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