MICROWAVE PHOTOSENSITIVITY OF SURFACE-BARRIER STRUCTURES BASED ON DEGENERATED SEMICONDUCTOR-SEMICONDUCTOR TRANSITIONS

被引：0
|
作者：
BOBRENKO, YN
PAVELETS, AM
PAVELETS, SY
TKACHENKO, VM
机构：
来源：
PISMA V ZHURNAL TEKHNICHESKOI FIZIKI | 1994年 / 20卷 / 12期
关键词：
D O I：
暂无
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：9 / 13
页数：5
相关论文
共 50 条
  • [21] SHORT-WAVELENGTH PHOTOSENSITIVITY OF SURFACE-BARRIER STRUCTURES - INFLUENCE OF AN INTERMEDIATE INSULATING LAYER
    VIGDOROVICH, EN
    GOLDBERG, YA
    DURDYMURADOVA, MG
    MELEBAEV, D
    TSARENKOV, BV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (08): : 854 - 857
  • [22] Chaotic potential on the degenerated semiconductor surface
    Bondarenko V.B.
    Davydov S.N.
    Nacke B.
    Filimonov A.V.
    Key Engineering Materials, 2019, 806 : 17 - 23
  • [23] Photosensitivity of surface-barrier and point structures on Cd1 − xMnxTe single crystals
    G. A. Il’chuk
    R. Yu. Petrus’
    Yu. A. Nikolaev
    V. Yu. Rud’
    Yu. V. Rud’
    E. I. Terukov
    Technical Physics, 2008, 53 : 722 - 726
  • [24] RESPONSE OF SEMICONDUCTOR SURFACE-BARRIER COUNTERS TO NITROGEN IONS AND ALPHA-PARTICLES
    HALBERT, ML
    BLANKENSHIP, JL
    NUCLEAR INSTRUMENTS & METHODS, 1960, 8 (01): : 106 - 116
  • [25] Surface-barrier 1/f-noise in semiconductor structures and its use for quality evaluation of electron devices
    Vorobjev, MD
    Zvetkov, PA
    NOISE IN PHYSICAL SYSTEMS AND 1/F FLUCTUATIONS, PROCEEDINGS OF THE 14TH INTERNATIONAL CONFERENCE, 1997, : 605 - 608
  • [26] STUDY OF THE SURFACE-BARRIER SEMICONDUCTOR DETECTOR RESPONSE TO THE FISSION FRAGMENTS IN THE CHANNELING MODE
    ALEXANDROV, AA
    ALEXANDROVA, IA
    PODSHIBYAKIN, SL
    PYATKOV, YV
    SLYUSARENKO, AI
    SHEMETOV, AN
    GAYSHAN, VL
    KOGAN, VI
    PIKUL, VP
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1992, 312 (03): : 542 - 546
  • [27] METHOD FOR DETERMINATION OF PARAMETERS OF IMPURITY CENTERS IN A SEMICONDUCTOR FROM RELAXATION OF REVERSE CURRENT IN SURFACE-BARRIER STRUCTURES AS APPLIED TO GAAS
    TSARENKOV, BV
    GOLDBERG, YA
    POSSE, EA
    SHULINSKAYA, MM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (12): : 2003 - 2006
  • [28] BREAKDOWN OF GAP SURFACE-BARRIER STRUCTURES
    GOLDBERG, YA
    GUSINSKII, GM
    LEMBERG, IK
    LVOVA, TV
    TSARENKOV, BV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (03): : 324 - 325
  • [29] Radical cation salts of BETS and ET with dicyanamidocuprate anions demonstrating metal-insulator and semiconductor-semiconductor transitions
    Kushch, Nataliya D.
    Kopotkov, Vyacheslav A.
    Shilov, Gennady, V
    Akimov, Alexander, V
    Tokarev, Sergey, V
    Yagubskii, Eduard B.
    Zverev, Vladimir N.
    Khasanov, Salavat S.
    Winter, Stephen M.
    Jeschke, Harald O.
    POLYHEDRON, 2020, 189
  • [30] CARRIER HEATING IN SURFACE-BARRIER STRUCTURES
    TOLSTIKHIN, VI
    SOVIET MICROELECTRONICS, 1986, 15 (05): : 233 - 238
12345