K-BAND GAINAS/INP CHANNEL POWER HEMTS

被引：11

作者：

MATLOUBIAN, M ^{[1
]}

LIU, T ^{[1
]}

JELLOIAN, LM ^{[1
]}

THOMPSON, MA ^{[1
]}

RHODES, RA ^{[1
]}

机构：

[1] HUGHES AIRCRAFT CO,SPACE & COMMUN GRP,EL SEGUNDO,CA 90245

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 09期

关键词：

GALLIUM INDIUM ARSENIDE; HIGH ELECTRON MOBILITY TRANSISTORS; POWER TRANSISTORS;

D O I：

10.1049/el:19950482

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report on the DC and power performance of GaInAs/InP composite channel HEMTs with a 30 Angstrom GaInAs channel. Devices with gate length of 0.15 mu m exhibit off-state drain-to-source breakdown voltages of more than 10V and on-state drain-to-source breakdown voltages of 8V. Using a 450 mu m wide HEMT, an output power of more than 280mW (0.62W/mm) has been obtained with power-added efficiency of 46% at 20GHz.

引用

页码：761 / 762

页数：2

共 8 条

[1]

MATLOUBIAN M., NGUYEN L.D., BROWN A.S., LARSON L.E., MELKNDES M.A., THOMPSON M.A., High power and high efficiency AlInAs/GalnAs on InP HEMTs, IEEE MTT-S Symp. Dig., pp. 721-724, (1991)

[2]

HO P., SMITH P.M., HWANG K.C., WANG S.C., KAO M.Y., CHAO P.C., LIU S.M.J., 60GHz power performance of 0.1 μm gate-length InAlAs/InGaAs HEMTs, Proc. 6th Int. Conf. and InP and Related Materials, pp. 411-414, (1994)

[3]

BAHL S.R., DEL ALAMO J.A., DICKMANN J., SCHILDBERG S., Off-State breakdown in InAlAs/InGaAs MODFETs, IEEE Trans., ED-42, 1, pp. 15-22, (1995)

[4]

DICKMANN J., SCHILDBERG S., GEYER A., MAILE B.E., SCHURR A., HEUTHE S., NAROZNY P., Breakdown mechanisms in the on-state mode of operation of InAlAs/InxGa1 xAs pseudomorphic HEMTs, Proc. 6th Int. Conf. on InP and Related Materials, pp. 335-338, (1994)

[5]

ENOKI I., ARAI K., KOHZEN A., ISHII Y., InGaAs/InP double channel HEMT on InP, Proc. 4th Int. Conf. on InP and Related Materials, pp. 14-17, (1992)

[6]

MATLOUBIAN M., JELLOIAN L.M., LUI M., LUI T., LARSON L.E., NGUYEN L.D., LE M.V., GalnAs/InP composite channel HEMTs, 51st Device Research Conf., (1993)

[7]

BAHL S.R., DEL ALAMO J.A., Breakdown voltage enhancement from channel quantization in InAlAs/n-InGaAs HFETs, IEEE Electron Device Lett., 13, pp. 123-125, (1992)

[8]

JELLOIAN L.M., MATLOUBIAN M., LUI T., LUI M., THOMPSON M.A., InP-based HEMTs with Al0.48In0.52AsxPx Schottky layers, IEEE Electron Device Lett., 15, 5, pp. 172-174, (1994)

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