ATOMIC-SCALE VIEW OF ALGAAS/GAAS MULTILAYERS WITH CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY

被引：4
|
作者：
JOHNSON, MB
MAIER, U
MEIER, HP
SALEMINK, H
机构：
[1] Zurich Research Laboratory, IBM Research Division
来源：
JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(93)90795-X
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Atomically-resolved cross-sectional topographic images of AlGaAs/GaAs multilayers, which includes a sequence of 1, 2, 5, and 10 nm AlGaAs and GaAs layers, have been made using a scanning tunneling microscope. All the layers appear distinct and the dimensions of the as-grown layers can be accurately measured. Furthermore, alloy fluctuations and interface roughness over 2 nm length scales and ordering along certain directions are clearly observed.
引用
收藏
页码：1077 / 1082
页数：6
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