THE GROWTH OF AL2O3 SINGLE-CRYSTALS BY THE CZOCHRALSKI METHOD

被引：0
|
作者：
MORITA, S
SEKIWA, H
TOSHIMA, H
MIYAZAWA, Y
机构：
[1] NIPPON MEKTRON LTD,KITAIBARAKI,IBARAKI 31915,JAPAN
[2] NATL INST RES INORGAN MAT,SAKURA,IBARAKI 305,JAPAN
来源：
NIPPON SERAMIKKUSU KYOKAI GAKUJUTSU RONBUNSHI-JOURNAL OF THE CERAMIC SOCIETY OF JAPAN | 1993年 / 101卷 / 01期
关键词：
CZOCHRALSKI METHOD; AL2O3 SINGLE CRYSTALS; TI DOPED AL2O3 SINGLE CRYSTALS; BUBBLE; EFFECTIVE SEGREGATION COEFFICIENT; CONVECTION; CONSTITUTIONAL SUPERCOOLING;
D O I：
暂无
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The effects of growth parameters on bubble formation in Al2O3 crystals in the Czochralski method were investigated. Pure Al2O3 single crystals were bubble free both under non-reducing and reducing atmospheres. Ti doped Al2O3 single crystals grown under a H-2-containing atmosphere were bubble free and those grown under non-reducing atmospheres contained many bubbles. The effective segregation coeffcient of Ti ions was estimated to be greatly reduced under non-reducing atmospheres. Convection of the melt was remarkably enhanced under a H-2-containing atmosphere. The conditions for the bubble formation is concluded to be similar to that of constitutional supercooling.
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页码：108 / 112
页数：5
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