OSCILLATORY INTERFACE INSTABILITY DURING CZOCHRALSKI GROWTH OF HEAVILY DOPED GERMANIUM

被引:14
作者
SINGH, R [1 ]
WITT, AF [1 ]
GATOS, HC [1 ]
机构
[1] MIT,DEPT MET & MAT SCI,CAMBRIDGE,MA 02139
关键词
D O I
10.1149/1.2401821
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:380 / 386
页数:7
相关论文
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