GAAS SHALLOW-HOMOJUNCTION SOLAR-CELLS ON GE-COATED SI SUBSTRATES

被引：64

作者：

GALE, RP

FAN, JCC

TSAUR, BY

TURNER, GW

DAVIS, FM

机构：

来源：

ELECTRON DEVICE LETTERS | 1981年 / 2卷 / 07期

关键词：

D O I：

10.1109/EDL.1981.25386

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：169 / 171

页数：3

共 11 条

[1]

BOZLER CO, 1978, 7TH P INT S GAAS REL, P429

[2]

Fan J. C. C., 1980, Fourteenth IEEE Photovoltaic Specialists Conference 1980, P1102

[3] SIMPLIFIED FABRICATION OF GAAS HOMOJUNCTION SOLAR-CELLS WITH INCREASED CONVERSION EFFICIENCIES [J].

FAN, JCC ;

BOZLER, CO ;

CHAPMAN, RL .

APPLIED PHYSICS LETTERS, 1978, 32 (06) :390-392

[4]

FAN JCC, 1979, APPL PHYS LETT, V35, P875, DOI 10.1063/1.90990

[5]

GODLEWSKI MP, 1973, 10TH P IEEE PHOT SPE, P40

[6]

HOVEL HJ, 1975, SOLAR CELLS, V11, P27

[7]

KATODA T, 1980, J ELECTRON MATER, V9, P738

[8]

LEONBERGER F, COMMUNICATION

[9]

Maycock P. D., 1980, Fourteenth IEEE Photovoltaic Specialists Conference 1980, P6

[10] HETEROEPITAXIAL GROWTH OF GAP FILMS ON SI SUBSTRATES [J].

POGGE, HB ;

KEMLAGE, BM ;

BROADIE, RW .

JOURNAL OF CRYSTAL GROWTH, 1977, 37 (01) :13-22

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