lTHE COMPOSITION AND FORMATION MECHANISM OF ELECTRODEPOSITED CdSe FILMS

被引:0
|
作者
Liu Dong [1 ]
Zhang Yingzhou [1 ]
Zhou Shaomin [1 ]
机构
[1] Xiamen Univ, Dept Chem, Xiamen, Peoples R China
关键词
D O I
10.3866/PKU.WHXB19900417
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The cathodic deposition mechanism of CdSe films on T1 substrates was investigated using cyclic voltammetry and in-situ photocurrent mesurements XPS analysis showed that CdSe film composition depends on deposition potential, deposition time and concentrations of H2SeO3 in the bath, It was found that in 0.1mol.L-1 CdSO4 + 4mmol . L-1 H2SeO2 + 0.2mol . L-1 H2SO4, the deposits formed at potentials more positive than -0.50V are rich In Se, alternatively films rich in Cd are obtained at potentials more negative than -0.70V. The Se/Cd ratio of CdSe layers deposited at -0.68V approach to 1.1, but the content of Se in the deposits increases with. increasing H2SeO3 concentration. The results showed that the electrodeposition of CdSe follows two different mechanic corresponding to different deposition conditions. Modification of stoichiometry in CdSe films was also discussed.
引用
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页码:480 / 484
页数:5
相关论文
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