ION-BEAM INDUCED EPITAXY OF (100) AND (111) GAAS

被引：17

作者：

JOHNSON, ST

ELLIMAN, RG

WILLIAMS, JS

机构：

来源：

关键词：

D O I：

10.1016/0168-583X(89)90823-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：449 / 452

页数：4

共 7 条

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GRIMALDI, MG
PAINE, BM
NICOLET, MA
SADANA, DK
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) : 4038 - 4046
[2] JOHNSON ST, UNPUB J APPL PHYS
[3] JOHNSON ST, 1988, MATER RES SOCS S P, V100, P423
[4] DIRECT MEASUREMENT OF SOLID-PHASE EPITAXIAL-GROWTH KINETICS IN GAAS BY TIME-RESOLVED REFLECTIVITY
LICOPPE, C
NISSIM, YI
MERIADEC, C
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (08) : 3094 - 3096
[5] OLSON GL, 1983, MATER RES SOC S P, V13, P141
[6] POATE JM, 1984, ION IMPLANTATION BEA
[7] WILLIAMS JS, 1984, MATER RES S P, V45, P79