MINORITY-CARRIER DIFFUSION LENGTH OF P-GAAS DETERMINED BY TIME OF FLIGHT

被引：12

作者：

KEYES, BM ^{[1
]}

DUNLAVY, DJ ^{[1
]}

AHRENKIEL, RK ^{[1
]}

ASHER, SE ^{[1
]}

PARTAIN, LD ^{[1
]}

LIU, DD ^{[1
]}

KURYLA, MS ^{[1
]}

机构：

[1] VARIAN ASSOCIATES INC,RES CTR,PALO ALTO,CA 94303

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1990年 / 8卷 / 03期

关键词：

D O I：

10.1116/1.576796

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A diffusion time-of-flight (TOF) technique is described and analysis is performed on four different p-GaAs heterostructure devices. These p/n junction devices were grown by metal organic chemical vapor deposition (MOCVD). Both Zn and Mg were used as dopants with concentrations ranging from 1X1018 to 1 × 1019 cm −3. We have been able to determine the diffusivity (D) along with upper and lower estimates of the diffusion length (LD). The results imply the presence of a mechanism such as photon recycling. © 1990, American Vacuum Society. All rights reserved.

引用

页码：2004 / 2008

页数：5

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