SUBSURFACE DEFECT STRUCTURES IN ION-IMPLANTED, ANNEALED SI WAFERS IMAGED BY NONDESTRUCTIVE MODULATED REFLECTANCE IMAGING

被引：0
|
作者：
SMITH, WL
WILLENBORG, D
ROZGONYI, GA
MIRANDA, T
LARSEN, L
机构：
[1] THERMA WAVE INC,FREMONT,CA 94539
[2] N CAROLINA STATE UNIV,DEPT MAT ENGN,RALEIGH,NC 27695
[3] FAIRCHILD GATE ARRAY DIV,MILPITAS,CA 95035
[4] NATL SEMICOND CORP,SANTA CLARA,CA 95051
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C373 / C373
页数：1
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