共 23 条
- [21] INFLUENCE OF THE DENSITY OF THE ION CURRENT DURING IMPLANTATION ON THE LONG-RANGE EFFECTS IN IRON-DOPED SILICON-CRYSTALS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (03): : 342 - 343
- [22] HOPPING-CONDUCTION INVESTIGATION OF INFLUENCE OF FAST-NEUTRON IRRADIATION AND ANNEALING OF RADIATION DEFECTS IN N-TYPE GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (10): : 1138 - 1141
- [23] INFLUENCE OF HEAT-TREATMENT ON THE ELECTRON-SPIN RESONANCE AND ELECTRICAL-ACTIVITY OF PHOSPHORUS IMPURITIES IN CONVENTIONALLY AND NEUTRON-DOPED SILICON-CRYSTALS .1. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (07): : 854 - 855