LATTICE DEFORMATIONS AND MISFIT DISLOCATIONS IN GALNASP-INP DOUBLE-HETEROSTRUCTURE LAYERS

被引：70

作者：

OE, K

SHINODA, Y

SUGIYAMA, K

机构：

来源：

APPLIED PHYSICS LETTERS | 1978年 / 33卷 / 11期

关键词：

D O I：

10.1063/1.90236

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：962 / 964

页数：3

共 17 条

[1] GROWTH CHARACTERIZATION OF INP-INGAASP LATTICE-MATCHED HETEROJUNCTIONS [J].

ANTYPAS, GA ;

MOON, RL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) :1574-1577

[2]

ANTYPAS GA, 1973, 1972 P S GAAS, P48

[3] CALCULATED ELASTIC-CONSTANTS FOR STRESS PROBLEMS ASSOCIATED WITH SEMICONDUCTOR DEVICES [J].

BRANTLEY, WA .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) :534-535

[4]

BURNHAM RD, 1970, APPL PHYSICS LETTERS, V17, P445

[5] DIRECT MEASUREMENT OF INTERNAL STRAINS IN LIQUID-PHASE EPITAXIAL GARNET FILM ON GADOLINIUM GALLIUM GARNET (111) PLATE [J].

HATTANDA, T ;

TAKEDA, A .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (07) :1104-1105

[6] X-RAY STUDY OF ALXGA1-XAS EPITAXIAL LAYERS [J].

ISHIDA, K ;

MATSUI, J ;

KAMEJIMA, T ;

SAKUMA, I .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 31 (01) :255-262

[7] LATTICE MISMATCH AT INTERFACE IN GAP-GAP AND GAA1AS-GAAS EPITAXIAL-GROWTH [J].

KISHINO, S ;

OGIRIMA, M ;

KAJIMURA, T ;

KURATA, K .

JOURNAL OF CRYSTAL GROWTH, 1974, 24 (OCT) :266-271

[8] REDUCTION OF AL CONTAMINATION IN GAAS LAYER OF LPE-GROWN ALXGA1-XAS-GAAS HETEROSTRUCTURES [J].

KOPF, L ;

SUMSKI, S .

JOURNAL OF CRYSTAL GROWTH, 1975, 28 (03) :365-366

[9] ACCOMMODATION OF MISFIT ACROSS INTERFACE TEBWEEN CRYSTALS OF SEMICONDUCTING ELEMENTS OR COMPOUNDS [J].

MATTHEWS, JW ;

MADER, S ;

LIGHT, TB .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) :3800-&

[10] DEFECTS ASSOCIATED WITH ACCOMMODATION OF MISFIT BETWEEN CRYSTALS [J].

MATTHEWS, JW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01) :126-133

← 1 2 →