COMPUTER-SIMULATION ANALYSIS OF THE PLANAR CHANNELING EFFECT IN PRACTICAL ION-IMPLANTATION

被引：1
|
作者：
KIMURA, Y
KANG, HJ
SHIMIZU, R
机构：
[1] CHUNGBUK NATL UNIV,DEPT PHYS,CHEONGJU 310,SOUTH KOREA
[2] OSAKA UNIV,DEPT APPL PHYS,SUITA,OSAKA 565,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1988年 / 27卷 / 03期
关键词：
AMORPHIZATION - HIGH-DOSE ION IMPLANTATION - MODIFIED MARLOWE CODE - PLANAR CHANNELING EFFECT;
D O I：
10.1143/JJAP.27.L444
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L444 / L447
页数：4
相关论文
共 50 条
  • [31] CHANNELING EFFECTS AT LOW-ENERGY ION-IMPLANTATION
    BOLLMANN, J
    MERTENS, A
    KLOSE, H
    EPM 87: ENERGY PULSE AND PARTICLE BEAM MODIFICATION OF MATERIALS, 1988, 8 : 479 - 481
  • [32] COMPUTER-SIMULATION OF CHANNELING IN SINGLE-CRYSTALS
    SMULDERS, PJM
    BOERMA, DO
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 29 (03): : 471 - 489
  • [33] USE OF COMPUTER-SIMULATION TO INTERPRET CHANNELING EXPERIMENTS
    BARRETT, JH
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1976, 21 (11): : 1345 - 1345
  • [34] COMPUTER-SIMULATION OF CHANNELING IN SI AND GAAS CRYSTALS
    DITROI, F
    MEYER, JD
    MICHELMANN, RW
    BETHGE, K
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 99 (1-4): : 182 - 186
  • [35] CHARACTERIZATION OF ION-IMPLANTATION DAMAGE USING ELECTRON CHANNELING PATTERNS
    FARROW, RC
    JOY, DC
    JOURNAL OF METALS, 1979, 31 (12): : 83 - 83
  • [36] ION-IMPLANTATION IN BETA-SIC - EFFECT OF CHANNELING DIRECTION AND CRITICAL ENERGY FOR AMORPHIZATION
    EDMOND, JA
    DAVIS, RF
    WITHROW, SP
    MORE, KL
    JOURNAL OF MATERIALS RESEARCH, 1988, 3 (02) : 321 - 328
  • [37] QUANTITATIVE ELECTRON CHANNELING MEASUREMENT OF ION-IMPLANTATION DAMAGE IN ALUMINUM
    VARDIMAN, RG
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 16 (2-3): : 143 - 147
  • [38] QUANTITATIVE ELECTRON CHANNELING MEASUREMENT OF ION-IMPLANTATION DAMAGE IN ALUMINUM
    VARDIMAN, RG
    JOURNAL OF METALS, 1985, 37 (08): : A9 - A9
  • [39] AN EXPERIMENTAL AND COMPUTER-SIMULATION STUDY OF THE PROCESS OF BURIED SIO2 LAYER FORMATION AFTER OXYGEN ION-IMPLANTATION INTO SILICON
    YANKOV, RA
    CHAKAROV, IR
    WILSON, IH
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1990, 115 (1-3): : 157 - 171
  • [40] COMPUTER-SIMULATION OF CHANNELING IN STRAINED-LAYER SUPERLATTICES
    LENKEIT, K
    PIRRWITZ, A
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 67 (1-4): : 217 - 222
12345