共 50 条
- [21] CHANNELING EFFECT FOR LOW-ENERGY ION-IMPLANTATION IN SI NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR): : 265 - 272
- [22] CHANNELING EFFECTS AND DEFECT ACCUMULATION IN ION-IMPLANTATION NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1994, 90 (1-4): : 373 - 377
- [23] CHANNELING ION-IMPLANTATION THROUGH PALLADIUM FILMS JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06): : 1374 - 1377
- [28] Computer simulation of channeling profile analysis of implantation damage SILICON FRONT-END TECHNOLOGY-MATERIALS PROCESSING AND MODELLING, 1998, 532 : 133 - 140
- [29] SIMULATION OF ION-IMPLANTATION IN SI FOR 0.25 KEV H+ UNDER CHANNELING CONDITIONS NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 99 (1-4): : 632 - 636