COMPUTER-SIMULATION ANALYSIS OF THE PLANAR CHANNELING EFFECT IN PRACTICAL ION-IMPLANTATION

被引：1
|
作者：
KIMURA, Y
KANG, HJ
SHIMIZU, R
机构：
[1] CHUNGBUK NATL UNIV,DEPT PHYS,CHEONGJU 310,SOUTH KOREA
[2] OSAKA UNIV,DEPT APPL PHYS,SUITA,OSAKA 565,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1988年 / 27卷 / 03期
关键词：
AMORPHIZATION - HIGH-DOSE ION IMPLANTATION - MODIFIED MARLOWE CODE - PLANAR CHANNELING EFFECT;
D O I：
10.1143/JJAP.27.L444
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L444 / L447
页数：4
相关论文
共 50 条
  • [1] COMPUTER-SIMULATION OF ION-IMPLANTATION IN AMORPHOUS TARGETS
    HAGGMARK, LG
    JOURNAL OF METALS, 1981, 33 (09): : A9 - A9
  • [2] COMPUTER-SIMULATION OF ION-IMPLANTATION INTO CRYSTALLINE TARGETS
    POSSELT, M
    BIERSACK, JP
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 64 (1-4): : 706 - 710
  • [3] COMPUTER-SIMULATION OF DAMAGE PROCESSES DURING ION-IMPLANTATION
    KANG, HJ
    SHIMIZU, R
    SAITO, T
    YAMAKAWA, H
    JOURNAL OF APPLIED PHYSICS, 1987, 62 (07) : 2733 - 2737
  • [4] COMPUTER-SIMULATION STUDIES OF ION-IMPLANTATION IN CRYSTALLINE SILICON
    MURTHY, CS
    SRINIVASAN, GR
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (02) : 264 - 274
  • [5] DYNAMIC COMPUTER-SIMULATION OF HIGH-ENERGY ION-IMPLANTATION
    MOLLER, W
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1989, 2 (1-3): : 21 - 25
  • [6] COMPUTER-SIMULATION OF POINT-DEFECT DISTRIBUTIONS GENERATED BY ION-IMPLANTATION
    JARAIZ, M
    ARIAS, J
    RUBIO, JE
    BAILON, LA
    BARBOLLA, J
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 : 172 - 175
  • [7] COMPUTER-SIMULATION OF DOSE EFFECTS ON COMPOSITION PROFILES UNDER ION-IMPLANTATION
    MIYAGAWA, Y
    IKEYAMA, M
    SAITO, K
    MASSOURAS, G
    MIYAGAWA, S
    JOURNAL OF APPLIED PHYSICS, 1991, 70 (12) : 7289 - 7294
  • [8] EFFECTS OF PLANAR CHANNELING USING MODERN ION-IMPLANTATION EQUIPMENT
    TURNER, NL
    CURRENT, M
    SMITH, TC
    CRANE, D
    SOLID STATE TECHNOLOGY, 1985, 28 (02) : 163 - 172
  • [9] COMPUTER-SIMULATION OF CHANNELING IMPLANTATION AT HIGH AND MEDIUM ENERGIES
    POSSELT, M
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 : 28 - 32
  • [10] COMPUTER-SIMULATION OF MASS-SELECTIVE PLASMA-SOURCE ION-IMPLANTATION
    SHOHET, JL
    WICKESBERG, EB
    KUSHNER, MJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1994, 12 (04): : 1380 - 1386
12345