ION IMPLANTATION DEPTH DISTRIBUTIONS - ENERGY DEPOSITION INTO ATOMIC PROCESSES AND ION LOCATIONS

被引：33
作者：
BRICE, DK
机构：
来源：
APPLIED PHYSICS LETTERS | 1970年 / 16卷 / 03期
关键词：
D O I：
10.1063/1.1653112
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：103 / &
相关论文
共 12 条
[1]  
CHASMAN C, 1967, PHYS REV, V154, P493
[2]   CHANNELING OF MEDIUM-MASS IONS THROUGH SILICON [J].
EISEN, FH .
CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) :561-&
[3]   PULSE HEIGHT DEFECT AND ENERGY DISPERSION IN SEMICONDUCTOR DETECTORS [J].
HAINES, EL ;
WHITEHEAD, AB .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1966, 37 (02) :190-+
[4]  
Lindhard J., 1963, KGL DANSKE VIDENSKAB, V33
[5]  
PAVLOV PV, 1967, FIZ TVERD TELA+, V8, P2141
[6]  
PAVLOV PV, 1967, FIZ TVER TELA, V8, P2679
[7]   PARTITION OF AVERAGE ENERGY DEPOSITED IN SILICON AS A FUNCTION OF INCIDENT NEUTRON ENERGY [J].
SATTLER, AR ;
VOOK, FL .
PHYSICAL REVIEW, 1967, 155 (02) :211-+
[8]  
SATTLER AR, 1965, PHYS REV, V138, P1815
[9]   PARTITION OF AVERAGE ENERGY DEPOSITED IN GERMANIUM AS A FUNCTION OF INCIDENT NEUTRON ENERGY [J].
SATTLER, AR ;
VOOK, FL .
PHYSICAL REVIEW, 1968, 173 (02) :435-+
[10]  
SATTLER AR, 1968, RADIATION EFFECTS SE, P243
12