THERMAL-STABILITY OF HYDROGEN IN SILICON-NITRIDE FILMS PREPARED BY ECR PLASMA CVD METHOD

被引：17

作者：

HIRAO, T ^{[1
]}

KAMADA, T ^{[1
]}

KITAGAWA, M ^{[1
]}

SETSUNE, K ^{[1
]}

WASA, K ^{[1
]}

MATSUDA, A ^{[1
]}

TANAKA, K ^{[1
]}

机构：

[1] ELECTROTECH LAB,SAKURA,IBARAKI 305,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1988年 / 27卷 / 04期

关键词：

D O I：

10.1143/JJAP.27.528

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：528 / 533

页数：6

共 7 条

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[2] HIRAO T, IN PRESS JPN J APPL
[3] MANABE Y, 1986, 18TH INT C SOL STAT, P241
[4] LOW-TEMPERATURE CHEMICAL VAPOR-DEPOSITION METHOD UTILIZING AN ELECTRON-CYCLOTRON RESONANCE PLASMA
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (04): : L210 - L212
[5] HYDROGEN EVOLUTION FROM AMORPHOUS SI-N FILMS
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (09): : L752 - L754
[6] Sun R. C., 1980, 18th Annual Proceedings of Reliability Physics, P244, DOI 10.1109/IRPS.1980.362948
[7] ELECTRON TRAPPING IN AMORPHOUS SIO2 STUDIED BY CHARGE BUILDUP UNDER ELECTRON-BOMBARDMENT
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