HEAVY DOPING WITH SN OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY FOR NON-ALLOYED OHMIC CONTACTS

被引：2
|
作者：
LAZNICKA, M
DUNG, PT
OSWALD, J
VORLICEK, V
GREGORA, I
SIMECKOVA, M
JUREK, K
DOUBRAVA, P
机构：
来源：
CZECHOSLOVAK JOURNAL OF PHYSICS | 1988年 / 38卷 / 02期
关键词：
D O I：
10.1007/BF01596499
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：224 / +
页数：1
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