EFFECT OF HEAT TREATMENT ON 1.370 EV PHOTOLUMINESCENCE EMISSION BAND IN ZN-DOPED GAAS

被引：26

作者：

HWANG, CJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1968年 / 39卷 / 09期

关键词：

D O I：

10.1063/1.1656965

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4307 / &

共 20 条

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