HYPERFINE INTERACTIONS OF THE PB CENTER AT THE SIO2 SI(111) INTERFACE

被引:61
|
作者
COOK, M
WHITE, CT
机构
关键词
D O I
10.1103/PhysRevLett.59.1741
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:1741 / 1744
页数:4
相关论文
共 50 条
  • [11] PASSIVATION OF (111) SI/SIO2 INTERFACE BY FLUORINE
    WANG, XW
    MA, TP
    APPLIED PHYSICS LETTERS, 1992, 60 (21) : 2634 - 2636
  • [12] O-ENVIRONMENT OF UNPAIRED SI BONDS (PB DEFECTS) AT THE (111)SI/SIO2 INTERFACE
    STESMANS, A
    VANHEUSDEN, K
    PHYSICAL REVIEW B, 1991, 44 (20): : 11353 - 11357
  • [13] MAXIMUM DENSITY OF PB CENTERS AT THE (111)SI SIO2 INTERFACE AFTER VACUUM ANNEAL
    STESMANS, A
    VANGORP, G
    APPLIED PHYSICS LETTERS, 1990, 57 (25) : 2663 - 2665
  • [14] Analysis of Pb centers at the Si(111)/SiO2 interface following rapid thermal annealing
    Hurley, P.K. (phurley@nmrc.ie), 1600, American Institute of Physics Inc. (93):
  • [15] Dissociation kinetics of hydrogen-passivated Pb defects at the (111)Si/SiO2 interface
    Stesmans, A
    PHYSICAL REVIEW B, 2000, 61 (12): : 8393 - 8403
  • [16] Analysis of Pb centers at the Si(111)/SiO2 interface following rapid thermal annealing
    Hurley, PK
    Stesmans, A
    Afanas'ev, VV
    O'Sullivan, BJ
    O'Callaghan, E
    JOURNAL OF APPLIED PHYSICS, 2003, 93 (07) : 3971 - 3973
  • [18] 29Si hyperfine structure of the Pb1 interface defect in thermal (100)Si/SiO2
    Stesmans, A
    Nouwen, B
    Afanas'ev, VV
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1998, 10 (27) : L465 - L472
  • [19] Pb1 interface defect in thermal (100)Si/SiO2:: 29Si hyperfine interaction
    Stesmans, A
    Nouwen, B
    Afanas'ev, VV
    PHYSICAL REVIEW B, 1998, 58 (23): : 15801 - 15809
  • [20] Chemical Bonding Configurations at the Interface of SiO2/Si(111)
    Bahari, A.
    Suzban, M.
    Rezai, L.
    Rezai, M.
    Roodbari, M.
    Morgen, P.
    ASIAN JOURNAL OF CHEMISTRY, 2009, 21 (02) : 1609 - 1615