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- [4] OBSERVATION OF DIPOLAR INTERACTIONS BETWEEN PB0 DEFECTS AT THE (111) SI/SIO2 INTERFACE PHYSICAL REVIEW B, 1990, 42 (06): : 3765 - 3768
- [5] Dipolar interactions between unpaired Si bonds at the (111)Si/SiO2 interface MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 58 (1-2): : 52 - 55
- [6] Dipolar interactions between unpaired Si bonds at the (111)Si/SiO2 interface PHYSICAL REVIEW B, 2000, 61 (23): : 16068 - 16076
- [7] MODEL FOR THE P-B CENTER AT THE (111)SI/SIO2 INTERFACE PHYSICAL REVIEW B, 1994, 50 (15) : 10915 - 10923
- [10] Oxidation temperature dependent restructuring of the Pb defect at the (111) Si/SiO2 interface Stesmans, A., 1600, Pergamon Press Inc, Tarrytown, NY, United States (96):