USE OF MICROWAVE TECHNIQUES FOR MEASURING CARRIER LIFETIME AND MOBILITY IN SEMICONDUCTORS

被引：11
作者：
BROUSSEAU, M
SCHUTTLER, R
机构：
[1] Laboratoire de Physique des Solides, associé au C.N.R.S. Faculté des Sciences, I.N.S.A., 118, route Narbonne-Toulouse (Haute-Garonne)
来源：
SOLID-STATE ELECTRONICS | 1969年 / 12卷 / 05期
关键词：
D O I：
10.1016/0038-1101(69)90099-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The correct relationship between the microwave power loss and the conductivity of a semiconductor sample is not linear as assumed by many authors. However it will be seen that a calibration technique permits to follow with a very good accuracy the relative variation of lifetime. In the special case of a P-I-N junction used as a microwave attenuator, we can also measure the mobility variations. © 1969.
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页码：417 / +
页数：1
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