INTER-VALLEY AND INTERSUBBAND SCATTERING IN A QUANTIZED SILICON INVERSION LAYER

被引：8
作者：
BASU, PK
ROY, JB
NAG, BR
机构：
来源：
PHYSICAL REVIEW B | 1982年 / 25卷 / 10期
关键词：
D O I：
10.1103/PhysRevB.25.6380
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：6380 / 6384
页数：5
相关论文
共 20 条
[1]   INTERVALLEY TRANSITIONS IN INVERSION LAYERS [J].
DOHLER, GH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04) :903-907
[2]   DONOR WAVEFUNCTIONS IN SILICON BY THE ENDOR TECHNIQUE [J].
FEHER, G .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 :486-489
[3]   1ST-ORDER OPTICAL AND INTERVALLEY SCATTERING IN SEMICONDUCTORS [J].
FERRY, DK .
PHYSICAL REVIEW B, 1976, 14 (04) :1605-1609
[4]   OPTICAL AND INTERVALLEY SCATTERING IN QUANTIZED INVERSION LAYERS IN SEMICONDUCTORS [J].
FERRY, DK .
SURFACE SCIENCE, 1976, 57 (01) :218-228
[5]   HOT CARRIERS IN SILICON SURFACE INVERSION LAYERS [J].
HESS, K ;
SAH, CT .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) :1254-1257
[6]   ENERGY RELAXATION OF ELECTRONS IN (100) N-CHANNEL OF A SI-MOSFET .1. BULK PHONON TREATMENT [J].
KROWNE, CM ;
HOLMKENN.JW .
SURFACE SCIENCE, 1974, 46 (01) :197-231
[7]   INTERSUBBAND SCATTERING EFFECT ON THE MOBILITY OF A SI (100) INVERSION LAYER AT LOW-TEMPERATURES [J].
MORI, S ;
ANDO, T .
PHYSICAL REVIEW B, 1979, 19 (12) :6433-6441
[8]  
Nag B. R., 1980, SPRINGER SERIES SOLI, V11
[9]  
NAG BR, 1972, THEORY ELECTRICAL TR
[10]   IMPURITY AND LATTICE SCATTERING PARAMETERS AS DETERMINED FROM HALL AND MOBILITY ANALYSIS IN N-TYPE SILICON [J].
NORTON, P ;
BRAGGINS, T ;
LEVINSTEIN, H .
PHYSICAL REVIEW B, 1973, 8 (12) :5632-5653
12