GROWTH OF ULTRATHIN SI FILMS ON FCC CO(100) SURFACES

被引：1

作者：

RANGELOV, G ^{[1
]}

THOMANN, U ^{[1
]}

FAUSTER, T ^{[1
]}

机构：

[1] UNIV MUNICH, SEKT PHYS, D-80799 MUNICH, GERMANY

来源：

SURFACE SCIENCE | 1995年 / 331卷 / pt B期

关键词：

AUGER ELECTRON SPECTROSCOPY; CHEMISORPTION; COBALT; GROWTH; SILICON; SOFT X-RAY PHOTOELECTRON SPECTROSCOPY;

D O I：

10.1016/0039-6028(95)00383-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Ultrathin Si layers were deposited at room temperature on fee Co(100) films grown epitaxially on Cu(100). The surfaces were studied by low-energy electron diffraction (LEED), Auger electron, and photoelectron spectroscopy using synchrotron radiation. The growth mode was studied by Auger uptake curves. From the Si2p core-level shifts the existence of a unique adsorption site is inferred at low coverages. Photoelectron forward-scattering experiments revealed no pronounced binding directions, whereas LEED patterns were observed at all coverages. This is compatible with the growth of an ordered layer of Si on top of the Co(100) substrate at low coverages followed by the growth of a disordered Si layer with holes.

引用

页码：971 / 974

页数：4

共 18 条

[1] INVERSE PHOTOEMISSION-STUDY OF NICKEL SILICIDES
AZIZAN, M
BAPTIST, R
CHAUVET, G
TAN, TAN
[J]. SOLID STATE COMMUNICATIONS, 1986, 57 (01) : 1 - 3
[2] GROWTH, STRUCTURE AND OXIDATION OF ORDERED SILICON LAYERS ON NICKEL(001)
BERMUDEZ, VM
[J]. SURFACE SCIENCE, 1990, 230 (1-3) : L155 - L161
[3] THE DECOMPOSITION OF SILANE AND GERMANE ON NI(111) - IMPLICATIONS FOR HETEROGENEOUS CATALYSIS
DUBOIS, LH
NUZZO, RG
[J]. SURFACE SCIENCE, 1985, 149 (01) : 133 - 145
[4] GROWTH AND STRUCTURE OF THIN AU FILMS ON AG(111)
EISENHUT, B
STOBER, J
RANGELOV, G
FAUSTER, T
[J]. PHYSICAL REVIEW B, 1994, 49 (20): : 14676 - 14683
[5] GROWTH AND STRUCTURE OF AG ON PD(111) STUDIED BY PHOTOELECTRON FORWARD SCATTERING USING A 2-DIMENSIONAL DISPLAY-TYPE ANALYZER
EISENHUT, B
STOBER, J
RANGELOV, G
FAUSTER, T
[J]. PHYSICAL REVIEW B, 1993, 47 (19): : 12980 - 12983
[6] GROWTH AND STRUCTURE OF THIN CO FILMS ON CU(111) STUDIED BY FULL-SOLID-ANGLE X-RAY PHOTOELECTRON DISTRIBUTIONS
FAUSTER, T
RANGELOV, G
STOBER, J
EISENHUT, B
[J]. PHYSICAL REVIEW B, 1993, 48 (15): : 11361 - 11366
[7] MICROSCOPIC STRUCTURE OF THE SIO2/SI INTERFACE
HIMPSEL, FJ
MCFEELY, FR
TALEBIBRAHIMI, A
YARMOFF, JA
HOLLINGER, G
[J]. PHYSICAL REVIEW B, 1988, 38 (09): : 6084 - 6096
[8] GROWTH AND STRUCTURE OF FE AND CO THIN-FILMS ON CU(111), CU(100), AND CU(110) - A COMPREHENSIVE STUDY OF METASTABLE FILM GROWTH
KIEF, MT
EGELHOFF, WF
[J]. PHYSICAL REVIEW B, 1993, 47 (16): : 10785 - 10814
[9] LEED AND ANGLE-RESOLVED AES STUDIES ON SI-ADSORBED, PI-ADSORBED, AND CL-ADSORBED NI(100) SURFACES
MATSUDAIRA, T
ONCHI, M
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (16): : 3381 - 3387
[10] THE ADSORPTION AND DECOMPOSITION OF SILANE ON CU(111)
MCCASH, EM
CHESTERS, MA
GARDNER, P
PARKER, SF
[J]. SURFACE SCIENCE, 1990, 225 (03) : 273 - 280

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