FERROELECTRIC FIELD-EFFECT IN EPITAXIAL THIN-FILM OXIDE SRCUO2/PB(ZR0.52TI0.48)O-3 HETEROSTRUCTURES

A ferroelectric field effect in epitaxial thin film SrCuO2/Pb(Zr0.52Ti0.48)O-3 heterostructures was observed. A 3.5 percent change in the resistance of a 40 angstrom SrCuO2 layer (a parent high-temperature superconducting compound) was measured when the polarization field of the Pb(Zr0.52Ti0.48)O-3 layer was reversed by the application of a pulse of small voltage (<5 volts). This effect, both reversible and nonvolatile, is attributed to the electric field-induced charge at the interface of SrCuO2 and Pb(Zr0.52Ti0.48)O-3. This completely epitaxial thin film approach shows the possibility of making nonvolatile, low-voltage ferroelectric field effect devices for both applications and fundamental studies of field-induced doping in novel compounds like SrCuO2.