DIELECTRIC FUNCTION OF GAAS/ALAS SUPERLATTICES GROWN ON GAAS SUBSTRATES WITH DIFFERENT ORIENTATION

被引：2
|
作者：
LUKES, F [1 ]
PLOOG, K [1 ]
机构：
[1] PAUL DRUDE INST, O-1086 BERLIN, GERMANY
来源：
THIN SOLID FILMS | 1993年 / 233卷 / 1-2期
关键词：
D O I：
10.1016/0040-6090(93)90081-Y
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We performed spectroellipsometric measurements on (GaAs)n/(AlAs)m superlattices grown on GaAs substrates with (100), (110), (111) and (120) orientations. From the second derivatives of the real and imaginary parts of the pseudodielectric function we deduced that the GaAs and AlAs components appear in these spectra as well as a ''superlattice transition''. The critical point energies E1, E1 + DELTA1, and E0' of the GaAs components increase with decreasing n (a confinement effect) and E2(SIGMA) is n independent while E0, E1, E0 and E2 of AlAs do not depend on m within the experimental accuracy.
引用
收藏
页码：162 / 165
页数：4
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