BARRIER HEIGHTS OF SCHOTTKY JUNCTIONS ON N-INP TREATED WITH PHOSPHINE PLASMA

被引：25
|
作者：
SUGINO, T
SAKAMOTO, Y
SUMIGUCHI, T
NOMOTO, K
SHIRAFUJI, J
机构：
[1] Department of Electrical Engineering, Osaka University, Suita, Osaka, 565
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1993年 / 32卷 / 9A期
关键词：
INP; PHOSPHINE PLASMA; SCHOTTKY JUNCTION; SCHOTTKY BARRIER HEIGHT; KELVIN PROBE METHOD; SURFACE FERMI LEVEL;
D O I：
10.1143/JJAP.32.L1196
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Surface treatment of n-InP by phosphine (PH3) plasma is carried out to modify the surface properties. It is observed from Kelvin probe measurements that the surface Fermi level shifts near the conduction band edge after PH3 plasma treatment, while the surface Fermi level is located around 0.4 eV below the conduction band edge for a surface wet-etched before PH3 plasma treatment. A funneling metal-insulator-semiconductor (MIS) Schottky structure is formed on PH3-Plasma-treated InP to evaluate the treated surface. The Schottky barrier height evaluated from the Richardson plot is found to depend strongly on the metal work function. This suggests that the surface state density pinning the surface Fermi level is profoundly reduced due to PH3 plasma treatment.
引用
收藏
页码：L1196 / L1199
页数：4
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