LOW THRESHOLD BERYLLIUM IMPLANTED (GAAL)AS LASER ON SEMI-INSULATING SUBSTRATE

被引：16
作者：
WILT, D
BARCHAIM, N
MARGALIT, S
URY, I
YUST, M
YARIV, A
机构：
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1980年 / 16卷 / 04期
关键词：
D O I：
10.1109/JQE.1980.1070500
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：390 / 391
页数：2
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