ION PHOTODESORPTION FROM HYDROGENATED SILICON (111) SURFACES

被引：17

作者：

HELLNER, L

PHILIPPE, L

DUJARDIN, G

RAMAGE, MJ

ROSE, M

CIRKEL, P

DUMAS, P

机构：

[1] UNIV PARIS 11, UTILISAT RAYONNEMENT ELECTROMAGNET LAB, F-91405 ORSAY, FRANCE

[2] CNRS, LASIR, F-94320 THIAIS, FRANCE

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1993年 / 78卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(93)95823-N

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Electronic processes responsible for the breaking of Si-H bonds on hydrogenated Si (111) surfaces are investigated using a combination of photoemission experiments and H+ ion photodesorption studies. H+ desorption is produced after Si(2p) core excitation between 100 and 112 eV. A resonant process in the valence excitation range (20-30 eV) leads also to H+ desorption. These data confirm that electronic multi-excitation rather than single electron excitation is involved in producing ion desorption.

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收藏

页码：342 / 345

页数：4

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