LOW THRESHOLD CURRENT HIGH-TEMPERATURE OPERATION OF INGAAS ALGAAS STRAINED-QUANTUM-WELL LASERS

被引：10
作者：
DERRY, PL
HAGER, HE
CHIU, KC
BOOHER, DJ
MIAO, EC
HONG, CS
机构：
[1] Boeing Defense & Space Group, Seattle, WA 98124
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1992年 / 4卷 / 11期
关键词：
D O I：
10.1109/68.166937
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report improved high-temperature characteristics for In0.2Ga0.8As strained-quantum-well ridge waveguide lasers with an optimized cavity design. We have fabricated In0.2Ga0.8As lasers that operate CW at up to 220-degrees-C with over 9 mW output power. At 200-degrees-C the threshold current is as low as 15.9 mA for a 400 mum long laser with 35/98% reflectivity facets. Optimization of the laser cavity also improves the high-temperature operation of quantum-well lasers in other material systems; we have fabricated GaAs quantum well lasers that operate at up to 220-degrees-C CW.
引用
收藏
页码：1189 / 1191
页数：3
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