EXCITONS AND LIGHT-INDUCED DEGRADATION OF AMORPHOUS HYDROGENATED SILICON

被引：18

作者：

BRANDT, MS

STUTZMANN, M

机构：

[1] Max-Planck-Institut für Festkörperforschung, D 7000 Stuttgart 80

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 15期

关键词：

D O I：

10.1063/1.105144

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Excitonic states involved in electronic transport of undoped amorphous hydrogenated silicon (a-Si:H) are observed using spin-dependent photoconductivity (SDPC). Upon light soaking the excitonic signal decreases with regard to the SDPC signal due to recombination via dangling bonds. It has been suggested that excitonic tail-to-tail recombination leads to metastable defect creation in a-Si:H. Our experimental results are shown to be consistent with this model.

引用

页码：1620 / 1622

页数：3

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