EXCITONS AND LIGHT-INDUCED DEGRADATION OF AMORPHOUS HYDROGENATED SILICON

被引：18
|
作者：
BRANDT, MS
STUTZMANN, M
机构：
[1] Max-Planck-Institut für Festkörperforschung, D 7000 Stuttgart 80
来源：
APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 15期
关键词：
D O I：
10.1063/1.105144
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Excitonic states involved in electronic transport of undoped amorphous hydrogenated silicon (a-Si:H) are observed using spin-dependent photoconductivity (SDPC). Upon light soaking the excitonic signal decreases with regard to the SDPC signal due to recombination via dangling bonds. It has been suggested that excitonic tail-to-tail recombination leads to metastable defect creation in a-Si:H. Our experimental results are shown to be consistent with this model.
引用
收藏
页码：1620 / 1622
页数：3
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