共 50 条
- [31] A new dopant activation technique for poly-Si TFTs with a self-aligned gate-overlapped LDD structure INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, : 205 - 208
- [33] Fully self-aligned tri-layer a-Si:H thin-film transistors with deposited doped contact layer IEEE Electron Device Lett, 4 (124-126):
- [38] A new self-aligned poly-Si TFT employing a pre-patterned Al mask layer by backside exposure technique AMORPHOUS AND HETEROGENEOUS SILICON-BASED FILMS-2002, 2002, 715 : 719 - 724