CONTACT RESISTIVITIES OF AL AND TI ON SI MEASURED BY A SELF-ALIGNED VERTICAL KELVIN TEST RESISTOR STRUCTURE

被引:0
|
作者
WEN, LY
TAN, FL
CHUNG, LL
机构
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:997 / 1001
页数:5
相关论文
共 50 条
  • [31] A new dopant activation technique for poly-Si TFTs with a self-aligned gate-overlapped LDD structure
    Ohgata, K
    Mishima, Y
    Sasaki, N
    INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, : 205 - 208
  • [32] Fully self-aligned tri-layer a-Si:H thin-film transistors with deposited doped contact layer
    Thomasson, DB
    Jackson, TN
    IEEE ELECTRON DEVICE LETTERS, 1998, 19 (04) : 124 - 126
  • [33] Fully self-aligned tri-layer a-Si:H thin-film transistors with deposited doped contact layer
    Pennsylvania State Univ, University Park, United States
    IEEE Electron Device Lett, 4 (124-126):
  • [34] Mitigation of shunt in poly-Si/SiOx passivated interdigitated back contact monocrystalline Si solar cells by self-aligned etching between doped fingers
    Hartenstein, Matthew B.
    Nemeth, William
    Chen, Kejun
    LaSalvia, Vincenzo
    Theingi, San
    Page, Matthew
    Fell, Andreas
    Young, David L.
    Stradins, Paul
    Agarwal, Sumit
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2023, 252
  • [35] Fluoride concentration effect on the anodic growth of self-aligned oxide nanotube array on Ti6Al7Nb alloy
    Kaczmarek, A.
    Klekiel, T.
    Krasicka-Cydzik, E.
    SURFACE AND INTERFACE ANALYSIS, 2010, 42 (6-7) : 510 - 514
  • [36] Test structure and experimental analysis of emitter-base reverse voltage stress degradation in self-aligned bipolar transistors
    Shimamoto, H
    Tanabe, M
    Onai, T
    Washio, K
    Nakamura, T
    IEICE TRANSACTIONS ON ELECTRONICS, 1996, E79C (02) : 211 - 218
  • [37] Laterally gain-coupled 1.57μm DFB lasers with chromium surface grating and self-aligned Ti/Pt/Au ohmic contact
    Schreiner, R
    Körbl, M
    Gräbeldinger, H
    Gentner, JL
    Schweizer, H
    ELECTRONICS LETTERS, 2000, 36 (07) : 636 - 637
  • [38] A new self-aligned poly-Si TFT employing a pre-patterned Al mask layer by backside exposure technique
    Nam, WJ
    Lee, MC
    Park, KC
    Lee, JH
    Han, MK
    AMORPHOUS AND HETEROGENEOUS SILICON-BASED FILMS-2002, 2002, 715 : 719 - 724
  • [39] A Novel Field-Plated Lateral β-Ga2O3 MOSFET Featuring Self-Aligned Vertical Gate Structure
    Gao, Meng
    Huang, Huolin
    Yin, Luqiao
    Lu, Xiuzhen
    Zhang, Jianhua
    Ren, Kailin
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 70 (08) : 4309 - 4314
  • [40] Electrically Self-Aligned, Reconfigurable Test Structure Using WSe2/SnSe2 Heterojunction for TFET and MOSFET
    Dasika, Pushkar
    Watanabe, Kenji
    Taniguchi, Takashi
    Majumdar, Kausik
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (09) : 5377 - 5381