RADIATION-INDUCED SAMPLE MODIFICATION IN SURFACE-ANALYSIS - INP AS AN EXTREME EXAMPLE

[21] SURFACE-DIFFUSION ACTIVATION-ENERGY DETERMINATION USING ION-BEAM MICROTEXTURING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (02): : 195 - 198

[22] CRITICAL IMPLANTATION TEMPERATURE AND ANNEALING OF INDIUM-PHOSPHIDE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (03): : 968 - 969

[23] VANVECHTEN JA, 1980, HDB SEMICONDUCTORS, V3, pCH1

[24] CONE FORMATION ON METAL TARGETS DURING SPUTTERING [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (03) : 1145 - &

[25] CONE FORMATION AS A RESULT OF WHISKER GROWTH ON ION BOMBARDED METAL-SURFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (04): : 1821 - 1835

[26] ANNEALING OF DAMAGE IN SE+-IMPLANTED INDIUM-PHOSPHIDE [J]. SOLID-STATE ELECTRONICS, 1984, 27 (07) : 677 - 686

[27] Zhang T., 1983, NUCL INSTRUM METHODS, V209-210, P761, DOI [10.1016/0167-5087(83)90880-3, DOI 10.1016/0167-5087(83)90880-3.]

[21] SURFACE-DIFFUSION ACTIVATION-ENERGY DETERMINATION USING ION-BEAM MICROTEXTURING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (02): : 195 - 198

[22] CRITICAL IMPLANTATION TEMPERATURE AND ANNEALING OF INDIUM-PHOSPHIDE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (03): : 968 - 969

[23] VANVECHTEN JA, 1980, HDB SEMICONDUCTORS, V3, pCH1

[24] CONE FORMATION ON METAL TARGETS DURING SPUTTERING [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (03) : 1145 - &

[25] CONE FORMATION AS A RESULT OF WHISKER GROWTH ON ION BOMBARDED METAL-SURFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (04): : 1821 - 1835

[26] ANNEALING OF DAMAGE IN SE+-IMPLANTED INDIUM-PHOSPHIDE [J]. SOLID-STATE ELECTRONICS, 1984, 27 (07) : 677 - 686

[27] Zhang T., 1983, NUCL INSTRUM METHODS, V209-210, P761, DOI [10.1016/0167-5087(83)90880-3, DOI 10.1016/0167-5087(83)90880-3.]