GENERATION OF SURFACE-STATES ON THE SI-SIO2 INTERFACE UNDER THE INFLUENCE OF SYNCHROTRON RADIATION

被引：1
|
作者：
KULIPANOV, GN
LITVINOV, YM
MAZURENKO, SN
MIKHAILOV, MA
PANCHENKO, VE
机构：
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1989年 / 282卷 / 2-3期
关键词：
D O I：
10.1016/0168-9002(89)90053-3
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：590 / 591
页数：2
相关论文
共 50 条
  • [21] NATURE OF SI-SIO2 SURFACE-STATES APPEARING IN STRONG ELECTRIC-FIELDS
    BARABAN, AP
    TARANTOV, YA
    KONOROV, PP
    TROSHIKHIN, AG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (10): : 1222 - 1223
  • [22] INTERRELATION BETWEEN SURFACE-STATES AND TRANSITION LAYER DEFECTS IN SI-SIO2 STRUCTURES
    LYSENKO, VS
    SYTENKO, TN
    SNITKO, OV
    ZIMENKO, VI
    NAZAROV, AN
    OSIYUK, IN
    RUDENKO, TE
    TYAGULSKII, IP
    SOLID STATE COMMUNICATIONS, 1986, 57 (03) : 171 - 174
  • [23] INFLUENCE OF SODIUM ON SI-SIO2 INTERFACE
    DISTEFANO, TH
    LEWIS, JE
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06): : 1020 - 1024
  • [24] INTERFACE STATES AND INTERFACE DISORDER IN SI-SIO2 SYSTEM
    REVESZ, AG
    ZAININGER, KH
    EVANS, RJ
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (02) : 197 - +
  • [25] STRUCTURE OF THE DENSITY OF STATES AT THE SI-SIO2 INTERFACE
    PONOMAREV, AN
    PRIKHODKO, VG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (03): : 270 - 272
  • [26] THE NEUTRAL LEVEL OF SI-SIO2 INTERFACE STATES
    JAIN, S
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (03) : C137 - C137
  • [27] Photoinduced trap generation at the Si-SiO2 interface
    Cernusca, M
    Heer, R
    Reider, GA
    APPLIED PHYSICS B-LASERS AND OPTICS, 1998, 66 (03): : 367 - 370
  • [28] PHOTOCAPACITY PROBING OF SI-SIO2 INTERFACE STATES
    KAMIENIECKI, E
    NITECKI, R
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03): : 463 - 463
  • [29] MODEL OF ELECTRONIC STATES AT THE SI-SIO2 INTERFACE
    CARRICO, AS
    ELLIOTT, RJ
    BARRIO, RA
    PHYSICAL REVIEW B, 1986, 34 (02): : 872 - 878
  • [30] TRANSIENT SPECTROSCOPY OF SI-SIO2 INTERFACE STATES
    VUILLAUME, D
    BOURGOIN, JC
    SURFACE SCIENCE, 1985, 162 (1-3) : 680 - 686
12345