PROCESSING EFFECTS ON THE BREAKDOWN CHARACTERISTICS OF THIN GATE OXIDES IN CMOS TECHNOLOGY

被引：0
|
作者：
WU, IW [1 ]
MIKKELSEN, JC [1 ]
KOYANAGI, M [1 ]
机构：
[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 8B期
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D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：C445 / C446
页数：2
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