INVERTED GAAS/ALGAAS MODULATION-DOPED FIELD-EFFECT TRANSISTORS WITH EXTREMELY HIGH TRANSCONDUCTANCES

被引：29

作者：

CIRILLO, NC ^{[1
]}

SHUR, MS ^{[1
]}

ABROKWAH, JK ^{[1
]}

机构：

[1] UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55416

来源：

IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 02期

关键词：

D O I：

10.1109/EDL.1986.26298

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：71 / 74

页数：4

共 50 条

[1] INVERTED GAAS/ALGAAS MODULATION-DOPED FIELD-EFFECT TRANSISTORS WITH EXTREMELY HIGH TRANSCONDUCTANCES.
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[7] EXTREMELY LOW CONTACT RESISTANCES FOR ALGAAS/GAAS MODULATION-DOPED FIELD-EFFECT TRANSISTOR STRUCTURES
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