INVERTED GAAS/ALGAAS MODULATION-DOPED FIELD-EFFECT TRANSISTORS WITH EXTREMELY HIGH TRANSCONDUCTANCES

被引：29

作者：

CIRILLO, NC ^{[1
]}

SHUR, MS ^{[1
]}

ABROKWAH, JK ^{[1
]}

机构：

[1] UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55416

来源：

IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 02期

关键词：

D O I：

10.1109/EDL.1986.26298

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：71 / 74

页数：4

共 6 条

[1]

CIRILLO NC, 1985, 43RD DEV RES C

[2] BIAS DEPENDENCE AND LIGHT SENSITIVITY OF (AL,GA)AS/GAAS MODFETS AT 77-K [J].

DRUMMOND, TJ ;

FISCHER, RJ ;

KOPP, WF ;

MORKOC, H ;

LEE, K ;

SHUR, MS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (12) :1806-1811

[3]

HYUN CH, 1985, JUL P CORN IEEE C AD

[4] ANALYTIC APPROXIMATIONS FOR FERMI ENERGY OF AN IDEAL FERMI GAS [J].

JOYCE, WB ;

DIXON, RW .

APPLIED PHYSICS LETTERS, 1977, 31 (05) :354-356

[5] CHARGE CONTROL MODEL OF INVERTED GAAS-ALGAAS MODULATION DOPED FETS (IMODFETS) [J].

LEE, K ;

SHUR, M ;

DRUMMOND, TJ ;

MORKOC, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02) :113-116

[6] INTERFACIAL PROPERTIES OF (AL,GA)AS/GAAS STRUCTURES - EFFECT OF SUBSTRATE-TEMPERATURE DURING GROWTH BY MOLECULAR-BEAM EPITAXY [J].

MORKOC, H ;

DRUMMOND, TJ ;

FISCHER, R .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :1030-1033

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