共 50 条
- [41] PHOTOCONDUCTIVITY IN HALOGENATED AND HYDROGENATED AMORPHOUS-SILICON FILMS PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 85 (02): : 609 - 614
- [42] INFLUENCE OF THE EXCITATION-ENERGY ON THERMAL QUENCHING OF THE PHOTOCONDUCTIVITY OF HYDROGENATED AMORPHOUS-SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (12): : 1372 - 1374
- [46] The formation of H*2 by electron-irradiation of hydrogenated Si JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (7A): : L758 - L760
- [47] CRYSTALLIZATION OF AMORPHOUS CERAMICS DURING ELECTRON-IRRADIATION JOURNAL OF ELECTRON MICROSCOPY, 1990, 39 (03): : 210 - 210
- [48] INFLUENCE OF THE PARAMETERS OF PULSED ELECTRON-IRRADIATION ON THE EFFICIENCY OF FORMATION OF DEFECTS IN SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (12): : 1375 - 1376
- [49] CRYSTALLIZATION OF AMORPHOUS CERAMICS DURING ELECTRON-IRRADIATION JOURNAL OF ELECTRON MICROSCOPY, 1990, 39 (04): : 337 - 337
- [50] RELATION BETWEEN ELECTRON LOCALIZATION PROPERTIES AND INFRARED QUENCHING OF PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-SILICON PHYSICAL REVIEW B, 1988, 37 (18): : 10912 - 10914