BAND MODEL FOR METAL-SEMICONDUCTOR TRANSITION IN NIS

被引：66
作者：
MATTHEISS, LF [1 ]
机构：
[1] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
来源：
PHYSICAL REVIEW B | 1974年 / 10卷 / 03期
关键词：
D O I：
10.1103/PhysRevB.10.995
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：995 / 1005
页数：11
相关论文
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