NEW NEGATIVE TONE RESISTS FOR SUB-QUARTER MICRON LITHOGRAPHY

被引：6
|
作者：
SACHDEV, H
KWONG, R
HUANG, W
KATNANI, A
SACHDEV, K
机构：
[1] IBM Microelectronic Division, Bldg. 300-40E Hopewell Junction
来源：
MICROELECTRONIC ENGINEERING | 1995年 / 27卷 / 1-4期
关键词：
Bishydro pyran derivative - Dihyropyranyl group - Matrix resin - Negative tone resist system - Photoacid generators - Sulfonyloxy triflate - Tetrahydropyranyl ether group - Triphenyl sulfonium triflate;
D O I：
10.1016/0167-9317(94)00131-D
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new acid amplified negative tone resist system is described which utilizes the formation of tetrahydropyranyl ether group for the crosslinking reaction. In a three component system, the phenolic groups of the matrix resin add to the dihydropyranyl groups of the crosslinker in the imaged areas. N-sulfonyloxy triflate or triphenyl sulfonium triflate are used as photoacid generators. The resist has excellent sensitivity to DUV, E-Beam, and X-Ray and is also used for positive tone surface imaging.
引用
收藏
页码：393 / 396
页数：4
相关论文
共 50 条
  • [31] Leakage current in sub-quarter micron MOSFET:: A perspective on stressed Delta IDDQ testing
    Semenov, O
    Vassighi, A
    Sachdev, M
    JOURNAL OF ELECTRONIC TESTING-THEORY AND APPLICATIONS, 2003, 19 (03): : 341 - 352
  • [32] Development of new negative-tone molecular resists based on calixarene for EUV lithography
    Oizumi, Hiroaki
    Kumise, Takafumi
    Itani, Toshiro
    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2008, 21 (03) : 443 - 449
  • [33] X-RAY-SENSITIVE RESISTS FOR SUB-MICRON LITHOGRAPHY
    ALEKSANDROV, YM
    VALIEV, KA
    VELIKOV, LV
    GLEBOVA, OS
    GRIBOV, BS
    DUSHENKOV, SD
    MOZZHUKHIN, DD
    PLESHIVTSEV, AS
    SELIVANOV, GK
    YAKIMENKO, MN
    SOVIET MICROELECTRONICS, 1983, 12 (01): : 1 - 8
  • [34] Design of i-line photoresist capable of sub-quarter micron lithography: Effects of novel phenolic resin with controlled end group
    Douki, K
    Kajita, T
    Iwanaga, S
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XV, PTS 1 AND 2, 1998, 3333 : 384 - 392
  • [35] Application of non-mass analyzed ion implanter to sub-quarter micron MOSFETs
    Kawasaki, Y
    Murakami, T
    Kuroi, T
    Ohno, Y
    Matsui, Y
    MATERIALS CHEMISTRY AND PHYSICS, 1998, 54 (1-3) : 17 - 22
  • [36] Effects of halo implant on hot carrier reliability of sub-quarter micron MOSFET's
    Das, A
    De, H
    Misra, V
    Venkatesan, S
    Veeraraghavan, S
    Foisy, M
    1998 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 36TH ANNUAL, 1998, : 189 - 193
  • [37] Leakage Current in Sub-Quarter Micron MOSFET: A Perspective on Stressed Delta IDDQ Testing
    Oleg Semenov
    Arman Vassighi
    Manoj Sachdev
    Journal of Electronic Testing, 2003, 19 : 341 - 352
  • [38] Sub-quarter micron poly-Si etching with positive pulse biasing technique
    Kofuji, N
    Tsujimoto, K
    Mizutani, T
    1996 1ST INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE, 1996, : 234 - 236
  • [39] Dendrimer monolayers as negative and positive tone resists for scanning probe lithography
    Rolandi, M
    Suez, I
    Dai, HJ
    Fréchet, JMJ
    NANO LETTERS, 2004, 4 (05) : 889 - 893
  • [40] DUV resists in negative tone high resolution electron beam lithography
    van Delft, FCMJM
    Holthuysen, FG
    MICROELECTRONIC ENGINEERING, 1999, 46 (1-4) : 383 - 387
12345