NEW NEGATIVE TONE RESISTS FOR SUB-QUARTER MICRON LITHOGRAPHY

被引：6

作者：

SACHDEV, H

KWONG, R

HUANG, W

KATNANI, A

SACHDEV, K

机构：

[1] IBM Microelectronic Division, Bldg. 300-40E Hopewell Junction

来源：

MICROELECTRONIC ENGINEERING | 1995年 / 27卷 / 1-4期

关键词：

Bishydro pyran derivative - Dihyropyranyl group - Matrix resin - Negative tone resist system - Photoacid generators - Sulfonyloxy triflate - Tetrahydropyranyl ether group - Triphenyl sulfonium triflate;

D O I：

10.1016/0167-9317(94)00131-D

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new acid amplified negative tone resist system is described which utilizes the formation of tetrahydropyranyl ether group for the crosslinking reaction. In a three component system, the phenolic groups of the matrix resin add to the dihydropyranyl groups of the crosslinker in the imaged areas. N-sulfonyloxy triflate or triphenyl sulfonium triflate are used as photoacid generators. The resist has excellent sensitivity to DUV, E-Beam, and X-Ray and is also used for positive tone surface imaging.

引用

页码：393 / 396

页数：4

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